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All Technical Committee Conferences (Searched in: Recent 10 Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2024-01-25
13:10 |
Kyoto |
(Primary: On-site, Secondary: Online) |
[Poster Presentation]
Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation]
Yoshiya Abe, Kenta Yachida, Kazuki Sawai, Mutsumi Kimura, Hidenori Kawanishi (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ.) |
ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. There... [more] |
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| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
11:45 |
Kyoto |
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Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] |
IDY2018-57
pp.13-16 |
| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
14:30 |
Kyoto |
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Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing
Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.) |
Ga-Sn-O(GTO) thin films were formed using RF magnetron sputtering, and the influence of deposition pressure and crystal ... [more] |
IDY2018-59
pp.33-36 |
| IDY |
2018-03-08
15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Self-Aligned Source/Drain Formation Technology by AlO Sputtering Realizing Highly Reliable Oxide TFT Backplane
Hiroshi Hayashi, Atsuhito Murai, Masanori Miura, Yasuhiro Terai, Yoshihiro Oshima, Tohru Saitoh, Yasunobu Hiromasu, Toshiaki Arai (JOLED) |
We have developed a novel fabrication process of self-aligned top-gate oxide TFT suitable for high resolution and high s... [more] |
IDY2018-21
pp.31-35 |
| IDY |
2018-03-08
16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Simulation Study of Novel Thin-Film Devices Using Depletion State of Amorphous Oxide Semiconductor
Katsumi Abe, Masato Fujinaga, Takeshi Kuwagaki (Silvaco Japan) |
Novel thin-film devices using amorphous oxide semiconductor (AOS) were studied via device simulation. The simulation of ... [more] |
IDY2018-22
pp.37-41 |
| IDY |
2017-02-24
15:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Highly Reliable Oxide TFT with Original Solution-Processed Materials
Yukiko Hirano, Minehide Kusayanagi, Sadanori Arae, Ryoichi Saotome, Yuji Sone, Shinji Matsumoto, Yuki Nakamura, Yuichi Ando, Naoyuki Ueda, Katsuyuki Yamada (Ricoh) |
We have developed original oxide materials and inks to make TFT. The original materials were doped-oxide semiconductor, ... [more] |
IDY2017-23
pp.23-27 |
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