| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST |
2023-06-21
13:10 |
Tokyo |
Tokyo University of Science Morito Memorial Hall (Tokyo) |
[Poster Presentation]
Analysis of Light Intensity and Charge Holding Time Dependence of Full Well Capacity in CMOS Image Sensor with A Buried Overflow Transfer Gate
Ken Miyauchi (Brillnics/Tohoku Univ.), Toshiyuki Isozaki, Rimon Ikeno, Junichi Nakamura (Brillnics) |
In this paper, an analytical model of CMOS image sensor full well capacity with a buried overflow transfer gate is propo... [more] |
IST2023-19
pp.1-4 |
| IST |
2021-03-26
09:00 |
Tokyo |
Online (Tokyo) |
A 64M CMOS Image Sensor using 0.7um pixel with high FWC and switchable conversion gain
Y. Jay Jung, Vincent C. Venezia, Sangjoo Lee, Chun Yung Ai, Yibo Zhu, King W. Yeung, Geunsook Park, Woonil Choi, Zhiqiang Lin, Wu-Zang Yang, Alan Chih-Wei Hsiung, Lindsay Grant (OmniVision Technologies, Inc.) |
This paper presents a 64 mega-pixel, backside illuminated, CMOS image sensor using a 0.7um pixel pitch with a 7.0ke- lin... [more] |
IST2021-8
pp.1-4 |
| IST |
2019-09-20
10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
Back Side Illuminated High Dynamic Range 4.0um Voltage Domain Global Shutter Pixel
Toshiyuki Isozaki, Kazuya Mori, Ken Miyauchi, Naoto Yasuda, Yusuke Sawai, Alex Tsai, Isao Takayanagi, Junichi Nakamura (BRILLNICS) |
A backside illuminated image sensors with a 4.0μm global shutter (GS) pixel has been fabricated in a 45nm/65nm stacked C... [more] |
IST2019-44
pp.5-8 |
| IST |
2019-09-20
11:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
A new 0.8um CMOS image sensor with low RTS noise and high full well capacity
Takuma Hasegawa (OVT Japan), Kazufumi Watanabe, Y. Jay Jung (OVT), Nagataka Tanaka, Takashi Nakashikiryo (OVT Japan), Wu-Zang Yang (OVT Taiwan), Alan Chih-Wei Hsiung, Zhiqiang Lin, Sohei Manabe, Vincent C. Venezia, Lindsay A. Grant (OVT) |
This is a report of a new 0.8µm, 32 mega pixel CMOS image sensor (CIS) with OmniVision second-generation (Gen2) stacking... [more] |
IST2019-46
pp.13-16 |
| IST |
2019-09-20
13:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
Optical Performance of A 120 ke- Full Well Capacity and 160µV/e- Conversion Gain 2.8µm Back Side Illuminated Pixel with Lateral Overflow Integration Capacitor
Ken Miyauchi, Kazuya Mori, Isao Takayanagi, Junichi Nakamura (BRILLNICS), Shigetoshi Sugawa (Tohoku Univ.) |
In this paper, we report about a prototype CMOS image sensor with a 2.8µm back side illuminated (BSI) pixel that employs... [more] |
IST2019-48
pp.21-24 |
| IST |
2018-06-27
13:10 |
Tokyo |
Tokyo Univ. Sci.-Morito-Kinenkan (Tokyo) |
[Poster Presentation]
Imaging of Sub-ppm Order Ozonated Water Convection Using High Ultraviolet Light Sensitivity and High Saturation CMOS Image Sensor
Maasa Murata, Yasuyuki Fujihara, Yusuke Aoyagi, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) |
This paper reports ultraviolet (UV) light spectral absorption imaging technology using a high UV light sensitivity and h... [more] |
IST2018-34
pp.13-16 |
| IST |
2016-05-06
13:05 |
Tokyo |
(Tokyo) |
[Poster Presentation]
Ultraviolet Spectral Imaging using High Light Resistance Wide Dynamic Range CMOS Image Sensor
Yasuyuki Fujihara, Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Hidekazu Ishii, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) |
This paper reports ultraviolet spectral imaging technology using a high light resistance wide dynamic range CMOS image s... [more] |
IST2016-24
pp.13-16 |
| IST |
2015-09-18
16:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response
Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) |
In this paper, a CMOS image sensor introducing wide spectral sensitive PD technology, small floating diffusion (FD) capa... [more] |
IST2015-55
pp.49-52 |
| IST |
2015-09-18
16:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
Analysis and Reduction of Floating Diffusion Capacitance Components and Application to High Sensitivity and High Full Well Capacity CMOS Image Sensor
Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) |
This paper reports the analysis and reduction technology of components of floating diffusion (FD) capacitance (CFD) and ... [more] |
IST2015-56
pp.53-56 |