| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-EID, IDY, SID-JC, IEIJ-SSL, IEE-EDD |
2025-01-23
13:20 |
Shizuoka |
(Shizuoka) |
[Poster Presentation]
Mechanism of carbon incorporation to layered BN films grown by low-pressure CVD using BCl3 as a boron source
Ruki Aoike, Soma Ota, Akira Takemura, Hayato Nakano, Ryota Aoyama, Takumi Naruse, Hiroko Kominami, Kazuhiro Hara (Shizuoka Univ.) |
(To be available after the conference date) [more] |
|
| IDY, IEIJ-SSL, IEICE-EID, SID-JC, IEE-EDD [detail] |
2023-01-27
15:05 |
Online |
(Online) |
2D layered thin films heterojunction for artificial photosynthesis photocatalyst
Yohei Mori, Kota Matsuoka, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ.) |
Artificial photosynthesis is a technology that uses sunlight to convert water and carbon dioxide into hydrocarbon-based ... [more] |
IDY2023-12
pp.49-52 |
| IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-23
13:05 |
Tottori |
Tottori Univ (Tottori) |
[Poster Presentation]
CVD growth of h-BN thin films on c-plane sapphire and Si (111) substrates
Tomoyasu Nakama, Kazuki Matsusita, Taira Watanabe, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
The hexagonal boron nitride (h-BN) thin films were grown on c-plane sapphire and Si (111) substrates by low-pressure che... [more] |
IDY2020-2
pp.1-4 |
| IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-23
13:10 |
Tottori |
Tottori Univ (Tottori) |
[Poster Presentation]
Mist CVD of ZnO-based nanoparticle dispersed thin films
Naoki Oshiro, Shogo Onoda, Toshihiro Nara, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
As one of the nanoparticle-dispersed semiconductor films we have proposed for novel phosphor applications, ZnO-nanoparti... [more] |
IDY2020-3
pp.5-8 |
| IEICE-SDM, IEICE-EID, IDY [detail] |
2019-12-24
13:45 |
Nara |
NAIST (Nara) |
Development of memristor using Ga-Sn-O thin film by mist CVD method
Masaki Kobayashi, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) |
We are conducting research on Resistive Random Access Memory (ReRAM) using Ga-Sn-O(GTO) thin films. In this study, we fa... [more] |
IDY2019-69
pp.5-8 |
| IEICE-SDM, IEICE-EID, IDY [detail] |
2019-12-24
14:05 |
Nara |
NAIST (Nara) |
Ga-Sn-O TFT fabricated on Al2O3 insulating film
Kazuki Hattori, Kenta Tanino, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ), Toshiyuki Kawaharamura, Li Liu (Kochi Univ of Tech) |
We compared the characteristics of Ga-Sn-O Thin Film Transistors (GTO TFTs) with and without an Al2O3 film by mist Chemi... [more] |
IDY2019-70
pp.9-12 |
| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
11:45 |
Kyoto |
(Kyoto) |
Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] |
IDY2018-57
pp.13-16 |
| IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2016-01-28
14:02 |
Toyama |
Toyama Univ. (Toyama) |
Direct synthesis of grapheme via alcohol CVD for flexible display applications
Toshiki Hamanishi, Atsushi Nakamura (Shizuoka Univ.) |
Light-weight and thin-thick transparent electrode materials have been required to realize flexible displays as alternati... [more] |
IDY2016-2
pp.17-20 |
| IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2016-01-28
15:36 |
Toyama |
Toyama Univ. (Toyama) |
Luminescence property of hexagonal boron nitride thin films grown on sapphire substrates by low pressure CVD
Takaki shimizu, Naoki Umehara, Atsushi Masuda, Kana Watanabe, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
The luminescence property of the hexagonal boron nitride (h-BN) thin films grown on c-plane sapphire substrates by chemi... [more] |
|
| IDY, IEICE-EID, IEE-EDD |
2013-01-25
10:10 |
Shizuoka |
Shizuoka Univ. (Shizuoka) |
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT) |
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] |
IDY2013-8
pp.73-76 |