Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-02 13:15 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka (NAIST) |
[more] |
|
IST |
2022-03-28 09:30 |
Online |
|
3-Layer Stacked Pixel-Parallel CMOS Image Sensors Using Hybrid Bonding of SOI Wafers Masahide Goto, Yuki Honda, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi (The Univ. of Tokyo), Eiji Higurashi (AIST), Hiroshi Toshiyoshi, Toshiro Hiramoto (The Univ. of Tokyo) |
We report 3-layer stacked pixel-parallel CMOS image sensors developed for the first time. The hybrid bonding of silicon-... [more] |
IST2022-11 pp.5-8 |
IEICE-ICD, IEICE-SDM, IST [detail] |
2020-08-07 11:25 |
Online |
Online |
Gate-all-around p-type poly-Si junctionless nanowire transistor with steep subthreshold slope Min-Ju Ahn, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (IIS, Tokyo Univ.) |
[more] |
|
IST |
2019-09-20 13:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Digital Pixel Image Sensors with Linear and Wide-Dynamic-Range Output Developed by Pixel-Wise 3-D Integration Masahide Goto (NHK), Yuki Honda (NHK-ES), Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi (Univ. of Tokyo), Eiji Higurashi (AIST), Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo) |
We report digital pixel image sensors developed by using pixel-wise three-dimensional (3D) integration technology. Photo... [more] |
IST2019-47 pp.17-20 |
IEICE-SDM, IEICE-ICD, IST [detail] |
2019-08-08 10:00 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
[more] |
|
IEICE-SDM, IEICE-ICD, IST [detail] |
2019-08-08 10:25 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Lecture]
3300V Scaled IGBT Switched by 5V Gate Drive Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) |
[more] |
|
IEICE-SDM, IEICE-ICD, IST [detail] |
2019-08-09 09:30 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Talk]
A study on a ferroelectric transistor memory with ultrathin IGZO channel Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) |
[more] |
|
IST, IEICE-ICD, IEICE-SDM |
2018-08-08 09:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) |
[more] |
|
IST, IEICE-ICD, IEICE-SDM |
2018-08-09 13:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
[more] |
|
IST, IEICE-ICD, IEICE-SDM |
2018-08-09 14:10 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Device and Process Design for HfO2-Based Ferroelectric Tunnel Junction Memory with Large Tunneling Electroresistance Effect and Multi-level Cell Masaharu Kobayashi, Yusaku Tagawa, Mo Fei, Toshiro Hiramoto (Univ. Tokyo) |
[more] |
|
IST |
2017-09-25 09:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Development of Event-Driven Correlated Double Sampling for A/D Converters in Pixel-Parallel 3-D Integrated CMOS Image Sensors Masahide Goto, Yuki Honda, Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo) |
We report novel event-driven noise reduction circuits with correlated double sampling (CDS) technique for pulse-frequenc... [more] |
IST2017-49 pp.1-4 |
IEICE-SDM, IEICE-ICD, IST [detail] |
2017-08-01 09:00 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
[Invited Talk]
A Nonvolatile SRAM Integrated with Ferroelectric HfO2 Capacitor for Normally-Off Operation Masaharu Kobayashi (Univ. of Tokyo), Nozomu Ueyama, Toshiro Hiramoto (IIS, Univ. of Tokyo) |
[more] |
|
IEICE-SDM, IEICE-ICD, IST [detail] |
2017-08-01 09:45 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
Parallel Programming of Non-volatile Power-up States of SRAM Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya (Univ. of Tokyo), Hirofumi Shinohara (Waseda Univ.), Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
[more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2016-08-03 15:05 |
Osaka |
Central Electric Club |
Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more] |
|
IEICE-ICD, IEICE-SDM, IST [detail] |
2016-08-03 15:30 |
Osaka |
Central Electric Club |
Performance Enhancement of Tunnel FET by Negative Capacitance Masaharu Kobayashi, Kyungmin Jang, Nozomu Ueyama, Toshiro Hiramoto (Univ. of Tokyo) |
IoT devices in a sensor network require a new energy-efficient transistor which operates at ultralow voltage and power e... [more] |
|
IST |
2015-03-27 09:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel Signal Processors Masahide Goto, Kei Hagiwara, Yoshinori Iguchi, Hiroshi Ohtake (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. Tokyo) |
We report the first demonstration of three-dimensional (3D) integrated CMOS image sensors with pixel-parallel A/D conver... [more] |
IST2015-11 pp.5-8 |
|