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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-SDM, IEICE-ICD, IST [detail] |
2019-08-08
10:00 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
[more] |
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| IST, IEICE-ICD, IEICE-SDM |
2018-08-08
09:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Understanding Temperature Effect on Subthreshold Slope Variability in Bulk and SOTB MOSFETs
Shuang Gao, Tomoko Mizutani, Kiyoshi Takeuchi, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) |
[more] |
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| IST, IEICE-ICD, IEICE-SDM |
2018-08-09
13:45 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
[more] |
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| IEICE-SDM, IEICE-ICD, IST [detail] |
2017-08-01
09:45 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
Parallel Programming of Non-volatile Power-up States of SRAM
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya (Univ. of Tokyo), Hirofumi Shinohara (Waseda Univ.), Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
[more] |
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| IEICE-ICD, IEICE-SDM, IST [detail] |
2016-08-03
15:05 |
Osaka |
Central Electric Club |
Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm
Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) |
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more] |
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