| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2024-01-25
13:10 |
Kyoto |
(Primary: On-site, Secondary: Online) |
[Poster Presentation]
Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation]
Yoshiya Abe, Kenta Yachida, Kazuki Sawai, Mutsumi Kimura, Hidenori Kawanishi (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ.) |
ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. There... [more] |
|
| IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2024-01-25
13:15 |
Kyoto |
(Primary: On-site, Secondary: Online) |
[Poster Presentation]
Reproduction of changes in membrane potential of neurons by synaptic devices using memristors
Kenta Yachida, Yoshiya Abe, Kazuki Sawai (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ./Ryukoku Univ.), Hidenori Kawanishi (Ryukoku Univ.), Mutsumi Kimura (Ryukoku Univ./NAIST) |
We attempted to replicate the changes in the membrane potential of neurons using thin-film neuromorphic devices that int... [more] |
|
| IEICE-SDM, IEICE-EID, IDY [detail] |
2019-12-24
14:05 |
Nara |
NAIST |
Ga-Sn-O TFT fabricated on Al2O3 insulating film
Kazuki Hattori, Kenta Tanino, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ), Toshiyuki Kawaharamura, Li Liu (Kochi Univ of Tech) |
We compared the characteristics of Ga-Sn-O Thin Film Transistors (GTO TFTs) with and without an Al2O3 film by mist Chemi... [more] |
IDY2019-70
pp.9-12 |
| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
11:45 |
Kyoto |
|
Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] |
IDY2018-57
pp.13-16 |
| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
14:00 |
Kyoto |
|
UV annealing dependence analysis of Ga - Sn - O TFT characteristics
Kenta Tanino, Ryo Takagi, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ) |
[more] |
IDY2018-58
pp.29-32 |
| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
14:45 |
Kyoto |
|
Evaluation of Ga-Sn-O thin film thermoelectric conversion devise made by Mist CVD
Tatsuya Aramaki, Ryuki Nomura, Yoku Ikeguchi, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) |
[more] |
IDY2018-60
pp.37-40 |
| IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2016-01-28
14:10 |
Toyama |
Toyama Univ. |
Cellar Neural using Thin-Film Devices
-- Working Confirmation of Letter Recognition --
Mutsumi Kimura, Ryohei Morita, Sumio Sugisaki, Tokiyoshi Matsuda (Ryukoku Univ.) |
We are developing cellular neural networks using thin-film devices. Because thin-film devices can be fabricated on large... [more] |
|
| IEICE-EID, IDY, IEE-EDD, SID-JC, IEIJ-SSL [detail] |
2016-01-28
14:18 |
Toyama |
Toyama Univ. |
Retinal Prosthesis using Thin-Film Devices
-- Working Confirmation using in vitro Experiment --
Mutsumi Kimura, Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda (Ryukoku Univ.) |
We are developing artificial retinas using thin-film devices. Because thin-film devices can be fabricated on transparent... [more] |
|
| IEICE-EID, SID-JC, IDY, IEIJ-SSL [detail] |
2015-07-28
16:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Report on SID 2015
-- AMD --
Tokiyoshi Matsuda (Ryukoku Univ.) |
[more] |
|