| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-ICD, IEICE-SDM, IST [detail] |
2024-08-06
11:00 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Understanding Abnormal Vth Increase Induced by Hot Carrier Injection at Cryogenic Temperatures
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori (AIST) |
In this study, we attempted to understand the mechanisms of hot carrier degradation in cryogenic MOSFET operation. Hot c... [more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
15:25 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
Low-Frequency Noise Source in Cryogenic Operation of Short-Channel Bulk MOSFETs
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
16:10 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Additional High-Pressure Hydrogen Annealing Improving the Cryogenic Operation of Si (110)-oriented n-MOSFETs
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Takumi Inaba, Shota Iizuka, Kimihiko Kato, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
16:35 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs
Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) |
[more] |
|
| IEICE-MRIS, MMS |
2022-12-08
13:30 |
Ehime |
Ehime Univ. + Online
(Primary: On-site, Secondary: Online) |
3D magnetic memory with artificial ferromagnet
Teruo Ono, Yu Min Hung, Heechan Jang, Feifan Ye, Ryosuke Hisatomi, Shiota Youichi, Takahiro Moriyama (Kyoto Univ.) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-09
11:05 |
Online |
On-line |
[Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-09
11:50 |
Online |
On-line |
TCAD Analysis for threshold voltage increase in cryogenic MOSFET operation
Hidehiro Asai, Takumi Inaba, Junichi Hattori, Koichi Fukuda, Hiroshi Oka, Takahiro Mori (AIST) |
[more] |
|
| IEICE-SDM, IEICE-ICD, IST [detail] |
2021-08-17
10:15 |
Online |
Online |
[Invited Talk]
Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers
Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST) |
[more] |
|
| BCT, IEEE-BT |
2020-09-04
13:10 |
Online |
Online |
A study of LDM system for DTTB
-- Production of modulator and demodulator --
Kazuki Imamura, Takeshi Anazawa, Hiromasa Okada, Takahiro Mori, Tomomi Fukazawa, Toru Takabayashi, Yasubumi Honma, Yutaka Shibata (TBS) |
We have proposed a method of providing both current 2K and 4K broadcasting service on the same timing and on the same fr... [more] |
BCT2020-61
pp.1-4 |
| BCT, IEEE-BT |
2020-09-04
13:35 |
Online |
Online |
A study of LDM system for DTTB
-- Evaluation of transmission characterristic --
Hiromasa Okada, kazuki Imamura, Takeshi Anazawa, Takahiro Mori, Tomomi Fukazawa, Toru Takabayashi, Yasubumi Honma, Yutaka Shibata (TBS) |
We have proposed a method of providing both current 2K and 4K broadcasting service on the same timing and on the same fr... [more] |
BCT2020-62
pp.5-8 |
| IEICE-ICD, IEICE-SDM, IST [detail] |
2020-08-07
09:30 |
Online |
Online |
[Invited Talk]
Understanding the Origin of Low-frequency Noise in Cryo-CMOS Toward Long-coherence-time Si Spin Qubit
Hiroshi Oka, Takashi Matsukawa, Kimihiko Kato, Shota Iizuka, Wataru Mizubayashi, Kazuhiko Endo, Tetsuji Yasuda, Takahiro Mori (AIST) |
[more] |
|
| IEICE-SDM, IEICE-ICD, IST [detail] |
2017-07-31
12:00 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
TCAD Simulation of C-TFET Circuit with Drain Offset Structure
Hidehiro Asai, Takahiro Mori, Junich Hattori, Takashi Matsukawa, Koichi Fukuda (AIST) |
[more] |
|
| IEICE-ICD, IEICE-SDM, IST [detail] |
2016-08-03
09:00 |
Osaka |
Central Electric Club |
[Invited Talk]
SRAM PUF using Polycrystalline Silicon Channel FinFET and Its Evaluation
Shin-ichi O'uchi, Yungxun Liu, Yohei Hori, Toshifumi Irisawa, Hiroshi Fuketa, Yukinori Morita, Shinji Migita, Takahiro Mori, Tadashi Nakagawa, Junichi Tsukada, Hanpei Koike, Meishoku Masahara, Takashi Matsukawa (AIST) |
[more] |
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