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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IEICE-ICD, IEICE-SDM, IST [detail] |
2024-08-06
11:25 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Reducing short-circuit current of CMOS Inverter circuits with “PN-Body Tied SOI-FET”
Kazuki Nakahashi, Takayuki Mori, Jiro Ida (Kanazawa Institute of Technology) |
In this study, we report the results of Short-Circuit current measurements in a CMOS inverter circuit using a "PN-Body T... [more] |
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| IEICE-ICD, IEICE-SDM, IST [detail] |
2023-08-01
16:35 |
Hokkaido |
(Primary: On-site, Secondary: Online) |
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs
Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT) |
[more] |
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| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-08
13:15 |
Online |
On-line |
[Invited Talk]
Research on Steep Slope "PN-Body Tied SOI-FET" for Ultra Low Power LSI
Jiro Ida, Takayuki Mori (Kanazawa IT) |
[more] |
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| IEICE-ICD, IEICE-SDM, IST [detail] |
2022-08-08
14:00 |
Online |
On-line |
Evaluation of Steep Subthreshold Slope Device "Dual-gate PN-body Tied SOI-FET" for Ultra-low Voltage Operation
Haruki Yonezaki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) |
[more] |
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| IEICE-ICD, IEICE-SDM, IST [detail] |
2020-08-07
11:00 |
Online |
Online |
CMOS Inverter Transfer Characteristics on Steep SS “PN-Body Tied SOI-FET”
Shota Ishiguro, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC) |
[more] |
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| IEICE-SDM, IEICE-ICD, IST [detail] |
2019-08-09
14:10 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET”
Wataru Yabuki, Jiro Ida, Takayuki Mori (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) |
[more] |
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| IEICE-SDM, IEICE-ICD, IST [detail] |
2019-08-09
14:35 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Ultra Low power rectenna with super SS "PN-Body Tied SOI-FET"
Takuya Yamada, Jiro Ida, Takayuki Mori, Nobuhiko Yasumaru, Kenji Itoh (KIT), Koichiro Ishibashi (UEC) |
[more] |
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| IST, IEICE-ICD, IEICE-SDM |
2018-08-07
14:25 |
Hokkaido |
Hokkaido University M Bldg. M151 |
Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) |
[more] |
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| IEICE-SDM, IEICE-ICD, IST [detail] |
2017-08-02
11:35 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
Gate Controlled Diode Characteristics of Super Steep Subthreshold Slope PN-Body Tied SOI-FET for High Efficiency RF Energy Harvesting
Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) |
[more] |
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| IEICE-ICD, IEICE-SDM, IST [detail] |
2016-08-03
14:40 |
Osaka |
Central Electric Club |
PN-Body Tied Super Steep SS FET with Body Bias below 1V and Drain Bias 0.1V
Takahiro Yoshida, Jiro Ida, Takashi Horii (KIT), Masao Okihara (Lapis), Yasuo Arai (KEK) |
We have found out that the super steep Subthreshold Slope (SS) of the PN-body tied SOI FET appeared with the body voltag... [more] |
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