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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IDY, IEICE-EID, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2020-01-23
13:10 |
Tottori |
Tottori Univ |
[Poster Presentation]
Mist CVD of ZnO-based nanoparticle dispersed thin films
Naoki Oshiro, Shogo Onoda, Toshihiro Nara, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
As one of the nanoparticle-dispersed semiconductor films we have proposed for novel phosphor applications, ZnO-nanoparti... [more] |
IDY2020-3
pp.5-8 |
| IEICE-SDM, IEICE-EID, IDY [detail] |
2019-12-24
13:45 |
Nara |
NAIST |
Development of memristor using Ga-Sn-O thin film by mist CVD method
Masaki Kobayashi, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) |
We are conducting research on Resistive Random Access Memory (ReRAM) using Ga-Sn-O(GTO) thin films. In this study, we fa... [more] |
IDY2019-69
pp.5-8 |
| IEICE-SDM, IEICE-EID, IDY [detail] |
2019-12-24
14:05 |
Nara |
NAIST |
Ga-Sn-O TFT fabricated on Al2O3 insulating film
Kazuki Hattori, Kenta Tanino, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ), Toshiyuki Kawaharamura, Li Liu (Kochi Univ of Tech) |
We compared the characteristics of Ga-Sn-O Thin Film Transistors (GTO TFTs) with and without an Al2O3 film by mist Chemi... [more] |
IDY2019-70
pp.9-12 |
| IEICE-EID, IEICE-SDM, IDY [detail] |
2018-12-25
11:45 |
Kyoto |
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Device Using Thin Film of GTO by MistCVD Method
Yuta Takishita, Sumio Sugisaki (Ryukoku Univ.), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
We made devices using Ga-Sn-O(GTO) thin films deposited by mist CVD method. A thin film transistor incorporating GTO pre... [more] |
IDY2018-57
pp.13-16 |
| IDY, IEICE-EID, IEE-EDD |
2013-01-25
10:10 |
Shizuoka |
Shizuoka Univ. |
Fabrication and properties of Oxide TFT with an IGZO/AlOx stack prepared by non-vacuum process "mist CVD"
Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, Mamoru Furuta (KUT) |
Last year, oxide TFT consisting of channel layer (IGZO) (47 nm) and gate insulator (AlOx) (116 nm) was fabricated by mis... [more] |
IDY2013-8
pp.73-76 |
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