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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| IST |
2020-03-27
17:20 |
Tokyo |
Kikaishinko kaikan (Tokyo)
(Postponed) |
A Single Exposure Linear Response Over 120dB Dynamic Range CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors
Yasuyuki Fujihara, Maasa Murata, Shota Nakayama, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Unib.) |
This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integr... [more] |
IST2020-25
pp.81-84 |
| IST |
2019-09-20
10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
Back Side Illuminated High Dynamic Range 4.0um Voltage Domain Global Shutter Pixel
Toshiyuki Isozaki, Kazuya Mori, Ken Miyauchi, Naoto Yasuda, Yusuke Sawai, Alex Tsai, Isao Takayanagi, Junichi Nakamura (BRILLNICS) |
A backside illuminated image sensors with a 4.0μm global shutter (GS) pixel has been fabricated in a 45nm/65nm stacked C... [more] |
IST2019-44
pp.5-8 |
| IST |
2019-09-20
13:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
Optical Performance of A 120 ke- Full Well Capacity and 160µV/e- Conversion Gain 2.8µm Back Side Illuminated Pixel with Lateral Overflow Integration Capacitor
Ken Miyauchi, Kazuya Mori, Isao Takayanagi, Junichi Nakamura (BRILLNICS), Shigetoshi Sugawa (Tohoku Univ.) |
In this paper, we report about a prototype CMOS image sensor with a 2.8µm back side illuminated (BSI) pixel that employs... [more] |
IST2019-48
pp.21-24 |
| IST |
2019-03-22
13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
A 24.3Me- Full Well Capacity and High Near Infrared Sensitivity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor
Maasa Murata, Rihito Kuroda, Yasuyuki Fujihara, Yusuke Otsuka (Tohoku Univ.), Hiroshi Shibata, Taku Shibaguchi, Yutaka Kamata, Noriyuki Miura, Naoya Kuriyama (LAPIS), Shigetoshi Sugawa (Tohoku Univ.) |
This paper presents a 16$mu$m pixel pitch CMOS image sensor exhibiting 24.3Me- full well capacity and high near infrared... [more] |
IST2019-17
pp.27-32 |
| IST |
2018-03-09
14:30 |
Tokyo |
NHK Housou-Gijyutu Lab. (Tokyo) |
An 8K4K-Resolution 60fps 450ke--Saturation-Signal Organic-Photoconductive-Film Global-Shutter CMOS Image Sensor with In-Pixel Noise Canceller
Kazuko Nishimura, Sanshiro Shishido, Yasuo Miyake, Masaaki Yanagida, Yoshiaki Satou, Makoto Shouho, Hidenari Kanehara, Ryota Sakaida, Yoshihiro Sato, Junji Hirase, Yuko Tomekawa (Panasonic), Yutaka Abe, Hiroshi Fujinaka (PSCS), Yoshiyuki Matsunaga (), Masashi Murakami, Mitsuru Harada, Yasunori Inoue (Panasonic) |
We have developed a CMOS image sensor that achieves 8K4K resolution, 450ke- saturation signal, 60fps frame rate, by usin... [more] |
IST2018-21
pp.43-46 |
| IST |
2015-09-18
16:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
Analysis and Reduction of Floating Diffusion Capacitance Components and Application to High Sensitivity and High Full Well Capacity CMOS Image Sensor
Fumiaki Kusuhara, Shunichi Wakashima, Satoshi Nasuno, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) |
This paper reports the analysis and reduction technology of components of floating diffusion (FD) capacitance (CFD) and ... [more] |
IST2015-56
pp.53-56 |
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