| Paper Abstract and Keywords |
| Presentation |
2025-09-18 11:30
A 2.1μm High Dynamic Range CMOS Image Sensor with Sub-pixel and Lateral Overflow Integration Capacitor Architecture Shunta Noguchi, Satoko Iida, Naoya Sato, Shinichiro Izawa, Takayuki Yamanaka, Yorito Sakano, Yusuke Oike (Sony) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
This is a report on an Automotive CMOS image sensor using a pixel architecture of 2.1μm Sub-pixel and Lateral Overflow Integration Capacitor (LOFIC) readout, which consists of a large and small PD with intra-pixel capacitance. This sensor has a pixel pitch of 2.1 µm and is equipped with a Sub-Pixel with two photodiodes, one large and one small, and a MOS capacitor Floating Capacitor (FC) and a MOM capacitor Extra Capacitor (EC) in the pixel, and by connecting four signals in a single exposure, it has both a High Dynamic Range (HDR) of 105 dB and LED Flicker Mitigation (LFM), Motion artifact free. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
CMOS Image Sensor / Automotive / HDR / LFM / Motion Artifact Free / Sub-pixel / LOFIC / |
| Reference Info. |
ITE Tech. Rep., vol. 49, no. 25, IST2025-38, pp. 9-12, Sept. 2025. |
| Paper # |
IST2025-38 |
| Date of Issue |
2025-09-11 (IST) |
| ISSN |
Online edition: ISSN 2424-1970 |
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