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Presentation 2024-08-06 11:00
Understanding Abnormal Vth Increase Induced by Hot Carrier Injection at Cryogenic Temperatures
Shunsuke Shitakata (Keio Univ./AIST), Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori (AIST)
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, we attempted to understand the mechanisms of hot carrier degradation in cryogenic MOSFET operation. Hot carrier stressing at 4 K caused a significant degradation such as a large shift in threshold voltage (Vth). However, subsequent measurements at room temperature (RT) showed almost no degradation at RT. On the other hand, stressing at RT showed a large Vth-shift on measurement at 4 K, which showed a little Vth-shift at RT measurement. These results suggest that the cause of the Vth shift differs between RT and 4 K. To clarify the reason, we evaluated the temperature dependence of Vth in devices after stressed at RT or 4 K, which showed that the Vth-shift observed at cryogenic temperatures is due to an increase of the density of band-edge states. Stressing is considered to cause interface degradation which generates the band-edge states regardless of the stressing temperature. In addition, we discuss the effects of deuterium annealing, whose effectiveness in mitigating hot carrier degradation at cryogenic temperatures has not yet been investigated.
Keyword (in Japanese) (See Japanese page) 
(in English) Cryo-CMOS / Cryogenic MOSFET operation / hot carrier / band-edge state / interface state / cryogenic temperature / deuterium anneal /  
Reference Info. ITE Tech. Rep.
Paper #  
Date of Issue  
ISSN Online edition: ISSN 2424-1970
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Conference Information
Committee IEICE-ICD IEICE-SDM IST  
Conference Date 2024-08-05 - 2024-08-07 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2024-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Understanding Abnormal Vth Increase Induced by Hot Carrier Injection at Cryogenic Temperatures 
Sub Title (in English)  
Keyword(1) Cryo-CMOS  
Keyword(2) Cryogenic MOSFET operation  
Keyword(3) hot carrier  
Keyword(4) band-edge state  
Keyword(5) interface state  
Keyword(6) cryogenic temperature  
Keyword(7) deuterium anneal  
Keyword(8)  
1st Author's Name Shunsuke Shitakata  
1st Author's Affiliation Keio University/National Institute of Advanced Industrial Science and Technology (Keio Univ./AIST)
2nd Author's Name Hiroshi Oka  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Kimihiko Kato  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Takumi Inaba  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Shota Iizuka  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Hidehiro Asai  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
7th Author's Name Takahiro Mori  
7th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2024-08-06 11:00:00 
Presentation Time 25 minutes 
Registration for IEICE-SDM 
Paper #  
Volume (vol) vol.48 
Number (no)  
Page  
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