| Paper Abstract and Keywords |
| Presentation |
2024-01-25 13:10
[Poster Presentation]
Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation]
Yoshiya Abe, Kenta Yachida, Kazuki Sawai, Mutsumi Kimura, Hidenori Kawanishi (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. Therefore, the purpose of this study is to fabricate and evaluate ReRAM using Ga-Sn-O(GTO), an amorphous oxide semiconductor (AOS), to demonstrate its potential for new applications that are low-cost and can be mass-produced. In this study, we fabricated the ReRAM with three-layer of GTO stacked with different resistance values and evaluated their electrical characteristics. The ReRAM exhibited resistance change behavior including negative resistance that was different from unipolar and bipolar systems. In addition, analog-like characteristics were obtained and the switching ratio was improved, indicating the potential for neuromorphic applications. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
ReRAM / GTO / Amorphous oxide semiconductor (AOS) / / / / / |
| Reference Info. |
ITE Tech. Rep. |
| Paper # |
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| Date of Issue |
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| ISSN |
Online edition: ISSN 2424-1970 |
| Download PDF |
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| Conference Information |
| Committee |
IEICE-EID IDY IEE-EDD SID-JC IEIJ-SSL |
| Conference Date |
2024-01-25 - 2024-01-26 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
IEICE-EID |
| Conference Code |
2024-01-EID-IDY-EDD-JC-SSL |
| Language |
English (Japanese title is available) |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation] |
| Sub Title (in English) |
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| Keyword(1) |
ReRAM |
| Keyword(2) |
GTO |
| Keyword(3) |
Amorphous oxide semiconductor (AOS) |
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| 1st Author's Name |
Yoshiya Abe |
| 1st Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
| 2nd Author's Name |
Kenta Yachida |
| 2nd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
| 3rd Author's Name |
Kazuki Sawai |
| 3rd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
| 4th Author's Name |
Mutsumi Kimura |
| 4th Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
| 5th Author's Name |
Hidenori Kawanishi |
| 5th Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
| 6th Author's Name |
Tokiyoshi Matsuda |
| 6th Author's Affiliation |
Kindai University (Kindai Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2024-01-25 13:10:00 |
| Presentation Time |
5 minutes |
| Registration for |
IEICE-EID |
| Paper # |
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| Volume (vol) |
vol.48 |
| Number (no) |
no.1 |
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