| Paper Abstract and Keywords |
| Presentation |
2021-10-21 10:50
High-precision CMOS Proximity Capacitance Image Sensors with Large-format 12 µm and High-resolution 2.8 µm Pixels
Yuki Sugama, Yoshiaki Watanabe, Rihito Kuroda, Masahiro Yamamoto, Tetsuya Goto (Tohoku Univ.), Toshiro Yasuda, Shinichi Murakami, Hiroshi Hamori (OHT), Naoya Kuriyama (LAPIS Semiconductor), Shigetoshi Sugawa (Tohoku Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
This paper presents newly developed two high-precision CMOS proximity capacitance image sensors: Chip A with 12 µm pitch pixels with a large detection area of 1.68 $cm^2$; Chip B with 2.8 µm pitch 1.8 M pixels for a higher resolution. Both fabricated chips achieved a capacitance detection precision of less than 100 zF ($10^{-19}$ F) at an input voltage of 20 V and less than 10 zF ($10^{-20}$ F) at 300 V due to the noise cancelling technique. Furthermore, by using multiple input pulse amplitudes, a capacitance detection dynamic range of 120 dB was achieved. The examples of capacitance imaging using the fabricated chips are also demonstrated. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
CMOS / Proximity Capacitance / Image Sensor / High Precision / Large Format / High Resolution / / |
| Reference Info. |
ITE Tech. Rep., vol. 45, no. 30, IST2021-51, pp. 13-16, Oct. 2021. |
| Paper # |
IST2021-51 |
| Date of Issue |
2021-10-14 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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