| 講演抄録／キーワード |
| 講演名 |
2020-03-27 13:30
High-definition Visible-SWIR InGaAs Image Sensor using Cu-Cu Bonding of III-V to Silicon Wafer
○Shunsuke Maruyama・Shuji Manda・Ryosuke Matsumoto・Suguru Saito・Hideki Minari・Takaaki Hirano・Taizo Takachi・Nobutoshi Fujii・Yuichi Yamamoto・Yoshifumi Zaizen・Tomoyuki Hirano・Hayato Iwamoto（SSS） |
| 抄録 |
（和） |
We developed a back-illuminated InGaAs image sensor with 1280x1024 pixels at 5-um pitch by using Cu-Cu hybridization connecting different materials, a III-V InGaAs/InP of photodiode array (PDA), and a silicon readout integrated circuit (ROIC). A new process architecture using an InGaAs/InP dies-to-silicon wafer and Cu-Cu bonding was established for high productivity and pixel-pitch scaling. We achieved low dark current and high sensitivity for wavelengths ranging from visible to short-wavelength infrared (SWIR). |
| （英） |
We developed a back-illuminated InGaAs image sensor with 1280x1024 pixels at 5-um pitch by using Cu-Cu hybridization connecting different materials, a III-V InGaAs/InP of photodiode array (PDA), and a silicon readout integrated circuit (ROIC). A new process architecture using an InGaAs/InP dies-to-silicon wafer and Cu-Cu bonding was established for high productivity and pixel-pitch scaling. We achieved low dark current and high sensitivity for wavelengths ranging from visible to short-wavelength infrared (SWIR). |
| キーワード |
（和） |
/ / / / / / / |
| （英） |
SWIR Image Sensor / InGaAs / Cu-Cu Bonding / / / / / |
| 文献情報 |
映情学技報, vol. 44, no. 11, IST2020-16, pp. 35-39, 2020年3月. |
| 資料番号 |
IST2020-16 |
| 発行日 |
2020-03-20 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| PDFダウンロード |
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