| Paper Abstract and Keywords |
| Presentation |
2019-12-24 13:45
Development of memristor using Ga-Sn-O thin film by mist CVD method
Masaki Kobayashi, Sumio Sugisaki, Mutsumi Kimura (Ryukoku Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We are conducting research on Resistive Random Access Memory (ReRAM) using Ga-Sn-O(GTO) thin films. In this study, we fabricated and evaluated an oxide layer ReRAM using the low-cost mist CVD method. The experiment of the I-V characteristics was repeated 150 times, and the characteristics as a memory were confirmed. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
ReRAM / Ga-Sn-O / Mist CVD method / / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 43, no. 44, IDY2019-69, pp. 5-8, Dec. 2019. |
| Paper # |
IDY2019-69 |
| Date of Issue |
2019-12-17 (IDY) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
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| Conference Information |
| Committee |
IEICE-SDM IEICE-EID IDY |
| Conference Date |
2019-12-24 - 2019-12-24 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
NAIST |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Semiconductor Material Process and Device Meeting |
| Paper Information |
| Registration To |
IDY |
| Conference Code |
2019-12-SDM-EID-IDY |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Development of memristor using Ga-Sn-O thin film by mist CVD method |
| Sub Title (in English) |
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| Keyword(1) |
ReRAM |
| Keyword(2) |
Ga-Sn-O |
| Keyword(3) |
Mist CVD method |
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| 1st Author's Name |
Masaki Kobayashi |
| 1st Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
| 2nd Author's Name |
Sumio Sugisaki |
| 2nd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
| 3rd Author's Name |
Mutsumi Kimura |
| 3rd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2019-12-24 13:45:00 |
| Presentation Time |
20 minutes |
| Registration for |
IDY |
| Paper # |
IDY2019-69 |
| Volume (vol) |
vol.43 |
| Number (no) |
no.44 |
| Page |
pp.5-8 |
| #Pages |
4 |
| Date of Issue |
2019-12-17 (IDY) |