| Paper Abstract and Keywords |
| Presentation |
2019-09-20 10:30
Back Side Illuminated High Dynamic Range 4.0um Voltage Domain Global Shutter Pixel
Toshiyuki Isozaki, Kazuya Mori, Ken Miyauchi, Naoto Yasuda, Yusuke Sawai, Alex Tsai, Isao Takayanagi, Junichi Nakamura (BRILLNICS) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
A backside illuminated image sensors with a 4.0μm global shutter (GS) pixel has been fabricated in a 45nm/65nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for photon-to-voltage conversion are formed on the top substrate (the 1st layer). Each photo converted signal from the 1st layer pixel is stored in sample-and-hold (S/H) capacitors on the bottom substrate (the 2nd layer) via micro-bump interconnection to achieve a voltage domain GS function. The 2 sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) [1] in the GS operation. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
CMOS Image Sensor / High Dynamic Range / High Sensitivity / High Full Well Capacity / Low Noise / Single Exposure / Multiple Conversion Gains / Voltage Domain Global Shutter |
| Reference Info. |
ITE Tech. Rep., vol. 43, no. 31, IST2019-44, pp. 5-8, Sept. 2019. |
| Paper # |
IST2019-44 |
| Date of Issue |
2019-09-13 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
|
| Conference Information |
| Committee |
IST |
| Conference Date |
2019-09-20 - 2019-09-20 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Image Sensor , etc. |
| Paper Information |
| Registration To |
IST |
| Conference Code |
2019-09-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Back Side Illuminated High Dynamic Range 4.0um Voltage Domain Global Shutter Pixel |
| Sub Title (in English) |
|
| Keyword(1) |
CMOS Image Sensor |
| Keyword(2) |
High Dynamic Range |
| Keyword(3) |
High Sensitivity |
| Keyword(4) |
High Full Well Capacity |
| Keyword(5) |
Low Noise |
| Keyword(6) |
Single Exposure |
| Keyword(7) |
Multiple Conversion Gains |
| Keyword(8) |
Voltage Domain Global Shutter |
| 1st Author's Name |
Toshiyuki Isozaki |
| 1st Author's Affiliation |
BRILLNICS Japan Inc. (BRILLNICS) |
| 2nd Author's Name |
Kazuya Mori |
| 2nd Author's Affiliation |
BRILLNICS Japan Inc. (BRILLNICS) |
| 3rd Author's Name |
Ken Miyauchi |
| 3rd Author's Affiliation |
BRILLNICS Japan Inc. (BRILLNICS) |
| 4th Author's Name |
Naoto Yasuda |
| 4th Author's Affiliation |
BRILLNICS Japan Inc. (BRILLNICS) |
| 5th Author's Name |
Yusuke Sawai |
| 5th Author's Affiliation |
BRILLNICS Japan Inc. (BRILLNICS) |
| 6th Author's Name |
Alex Tsai |
| 6th Author's Affiliation |
BRILLNICS Inc. (BRILLNICS) |
| 7th Author's Name |
Isao Takayanagi |
| 7th Author's Affiliation |
BRILLNICS Japan Inc. (BRILLNICS) |
| 8th Author's Name |
Junichi Nakamura |
| 8th Author's Affiliation |
BRILLNICS Japan Inc. (BRILLNICS) |
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| Speaker |
Author-1 |
| Date Time |
2019-09-20 10:30:00 |
| Presentation Time |
30 minutes |
| Registration for |
IST |
| Paper # |
IST2019-44 |
| Volume (vol) |
vol.43 |
| Number (no) |
no.31 |
| Page |
pp.5-8 |
| #Pages |
4 |
| Date of Issue |
2019-09-13 (IST) |