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Presentation 2019-08-07 14:15
TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET
Hidehiro Asai, Wen Hsin Chang, Naoya Okada, Koich Fukuda, Toshifumi Irisawa (AIST)
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Conference Information
Committee IEICE-SDM IEICE-ICD IST  
Conference Date 2019-08-07 - 2019-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Graduate School /Faculty of Information Science and 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To IEICE-SDM 
Conference Code 2019-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) TCAD analysis of the fringe-field effect on transfer characteristics of 2D channel FET 
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1st Author's Name Hidehiro Asai  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Wen Hsin Chang  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Naoya Okada  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Koich Fukuda  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Toshifumi Irisawa  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Date Time 2019-08-07 14:15:00 
Presentation Time 25 minutes 
Registration for IEICE-SDM 
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Volume (vol) vol.43 
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