Paper Abstract and Keywords |
Presentation |
2019-01-25 09:55
[Poster Presentation]
Current injection type emission devices using CuAlS2:Mn phosphor thin films
-- SiO2 barrier layer suppressing interfacial diffusion between phosphor/electrode layers -- Shogo Ueda, Kazuki Tujimori, Tadashi Ishigaki, Koutoku Ohmi (Tottori Univ.) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Red light-emitting devices consisting of CuAlS2:Mn polycrystalline phosphor thin films have been investigated. CuAlS2:Mn thin films were prepared by conventional electron-beam evaporation method at 600℃ using a self-preparing CuAlS2:Mn pellet. It has been confirmed that the SiO2 barrier layer is necessary to suppress a interfacial diffusion between the CuAlS2:Mn and ZnO layers during the deposition of the CuAlS2:Mn layer. From the SEM observation, a relatively smooth interface is observed. It is also found that the PL intensity is remarkably increased by inserting the SiO2 layer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CuAlS2:Mn / phosphor thin film / current injection type emission device / SiO2 barrier layer / / / / |
Reference Info. |
ITE Tech. Rep., vol. 43, no. 1, IDY2019-17, pp. 81-84, Jan. 2019. |
Paper # |
IDY2019-17 |
Date of Issue |
2019-01-17 (IDY) |
ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
Download PDF |
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Conference Information |
Committee |
IDY IEICE-EID IEIJ-SSL SID-JC IEE-EDD |
Conference Date |
2019-01-24 - 2019-01-25 |
Place (in Japanese) |
(See Japanese page) |
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(See Japanese page) |
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Paper Information |
Registration To |
IDY |
Conference Code |
2019-01-IDY-EID-SSL-JC-EDD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Current injection type emission devices using CuAlS2:Mn phosphor thin films |
Sub Title (in English) |
SiO2 barrier layer suppressing interfacial diffusion between phosphor/electrode layers |
Keyword(1) |
CuAlS2:Mn |
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phosphor thin film |
Keyword(3) |
current injection type emission device |
Keyword(4) |
SiO2 barrier layer |
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1st Author's Name |
Shogo Ueda |
1st Author's Affiliation |
Tottori University (Tottori Univ.) |
2nd Author's Name |
Kazuki Tujimori |
2nd Author's Affiliation |
Tottori University (Tottori Univ.) |
3rd Author's Name |
Tadashi Ishigaki |
3rd Author's Affiliation |
Tottori University (Tottori Univ.) |
4th Author's Name |
Koutoku Ohmi |
4th Author's Affiliation |
Tottori University (Tottori Univ.) |
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Speaker |
Author-1 |
Date Time |
2019-01-25 09:55:00 |
Presentation Time |
5 minutes |
Registration for |
IDY |
Paper # |
IDY2019-17 |
Volume (vol) |
vol.43 |
Number (no) |
no.1 |
Page |
pp.81-84 |
#Pages |
4 |
Date of Issue |
2019-01-17 (IDY) |