Paper Abstract and Keywords |
Presentation |
2018-12-25 14:30
Dependence of thermoelectric properties and structure of Ga-Sn-O thin films on annealing Yoku Ikeguchi, Tatsuya Aramaki (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Daichi Koretomo, Yusaku Magari, Mamoru Furuta (KUT), Mutsumi Kimura (Ryukoku Univ.) |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ga-Sn-O(GTO) thin films were formed using RF magnetron sputtering, and the influence of deposition pressure and crystal structure on thermoelectric properties was investigated. As a result, thermoelectric properties and electrical characteristics were improved by reducing deposition pressure. In addition, it was confirmed that the device subjected to the annealing treatment at 350 degrees for 1 hour had the best thermoelectric properties and was microcrystalline. It is considered that thermoelectric properties are improved by controlling the composition ratio of GTO. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Thermoelectric / Ga-Sn-O (GTO) / Oxide Semiconductor / Microcrystal / / / / |
Reference Info. |
ITE Tech. Rep., vol. 42, no. 45, IDY2018-59, pp. 33-36, Dec. 2018. |
Paper # |
IDY2018-59 |
Date of Issue |
2018-12-18 (IDY) |
ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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