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Presentation 2017-01-27 11:34
Growth of GaN thin films by chemical vapor deposition using Ga vapor
Kensuke Fukasawa, Tsuyoshi Nagase, Yuichirou Masuda, Tetsuya Kouno, Hiroko Kominami, Hara kazuhiko (Shizuoka Univ.)
Abstract (in Japanese) (See Japanese page) 
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Conference Information
Committee IEICE-EID IDY IEE-EDD IEIJ-SSL SID-JC  
Conference Date 2017-01-26 - 2017-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokushima Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Joint Meeting of Emissive/Non-emissive Displays 
Paper Information
Registration To IEICE-EID 
Conference Code 2017-01-EID-IDY-EDD-SSL-JC 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of GaN thin films by chemical vapor deposition using Ga vapor 
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1st Author's Name Kensuke Fukasawa  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Tsuyoshi Nagase  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Yuichirou Masuda  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Tetsuya Kouno  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Hiroko Kominami  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
6th Author's Name Hara kazuhiko  
6th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Date Time 2017-01-27 11:34:00 
Presentation Time 8 minutes 
Registration for IEICE-EID 
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Volume (vol) vol.41 
Number (no) no.2 
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