| Paper Abstract and Keywords |
| Presentation |
2016-03-11 11:15
A High-Sensitivity and Wide Dynamic-Range APD-CMOS Image Sensor
Manabu Usuda, Yusuke Sakata, Seiji Yamahira, Shigetaka Kasuga, Mitsuyoshi Mori, Yutaka Hirose, Yoshihisa Kato, Tsuyoshi Tanaka (Panasonic AIS) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We present a high-sensitivity CMOS image sensor with an avalanche multiplication of photoelectrons. The pixel structure contains a multiplication region formed by a p-n junction, which is located between a photoelectric conversion region and a charge-storage region in a silicon substrate. Photoelectrons can be multiplied to 10^5 times before transferring to readout circuits. The present sensor can reproduce a natural color imaging under a dark illumination condition of 0.01 lux, and can also realize a high dynamic-range imaging of 100dB by controlling the multiplication factor. All the components including a multiplication region and transistors are constructed in one substrate, and thus we have realized a megapixel APD-CMOS image sensor with a 3.8$mu$m pixel size. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
CMOS image sensor / Avalanche photodiode / APD / / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 40, no. 12, IST2016-11, pp. 17-20, March 2016. |
| Paper # |
IST2016-11 |
| Date of Issue |
2016-03-04 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
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