| Paper Abstract and Keywords |
| Presentation |
2015-09-18 16:10
A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response
Satoshi Nasuno, Shunichi Wakashima, Fumiaki Kusuhara, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
In this paper, a CMOS image sensor introducing wide spectral sensitive PD technology, small floating diffusion (FD) capacitance technology, lateral overflow integration capacitor (LOFIC) technology and buried channel technology is designed, fabricated and evaluated. A 5.6 μm pixel pitch CMOS image sensor was fabricated using a 0.18 μm 1P5M CMOS process technology. It achieved a high conversion gain (CG) of 240 μV/e-, a high full well capacity of 200 ke-, a wide spectral response for 190-1000 nm and a high robustness to deuterium lamp used as a UV light. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Spectral response / Ultraviolet light / Conversion gain / Full well capacity / CMOS image sensor / / / |
| Reference Info. |
ITE Tech. Rep., vol. 39, no. 35, IST2015-55, pp. 49-52, Sept. 2015. |
| Paper # |
IST2015-55 |
| Date of Issue |
2015-09-11 (IST) |
| ISSN |
Print edition: ISSN 1342-6893 Online edition: ISSN 2424-1970 |
| Download PDF |
|
| Conference Information |
| Committee |
IST |
| Conference Date |
2015-09-18 - 2015-09-18 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
IST |
| Conference Code |
2015-09-IST |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
A CMOS Image Sensor with 240μV/e- Conversion Gain, 200ke- Full Well Capacity and 190-1000nm Spectral Response |
| Sub Title (in English) |
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| Keyword(1) |
Spectral response |
| Keyword(2) |
Ultraviolet light |
| Keyword(3) |
Conversion gain |
| Keyword(4) |
Full well capacity |
| Keyword(5) |
CMOS image sensor |
| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Satoshi Nasuno |
| 1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
| 2nd Author's Name |
Shunichi Wakashima |
| 2nd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
| 3rd Author's Name |
Fumiaki Kusuhara |
| 3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
| 4th Author's Name |
Rihito Kuroda |
| 4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
| 5th Author's Name |
Shigetoshi Sugawa |
| 5th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2015-09-18 16:10:00 |
| Presentation Time |
30 minutes |
| Registration for |
IST |
| Paper # |
IST2015-55 |
| Volume (vol) |
vol.39 |
| Number (no) |
no.35 |
| Page |
pp.49-52 |
| #Pages |
4 |
| Date of Issue |
2015-09-11 (IST) |
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