| Paper Abstract and Keywords |
| Presentation |
2013-01-25 10:02
Development of Simulation Model for Oxide Semiconductor Thin-Film Transistors
Hiroshi Tsuji, Mitsuru Nakata, Hiroto Sato, Yoshiki Nakajima, Yoshihide Fujisaki, Tatsuya Takei, Toshihiro Yamamoto, Hideo Fujikake (NHK) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
A new simulation model for current-voltage characteristics of oxide semiconductor thin-film transistors (a-IGZO TFTs) is presented. This model is developed on the basis of the one-dimensional Poisson equation to significantly reduce the calculation time as compared to a widely-used two-dimensional approach. Furthermore, the model takes into account trap states in the band gap, and also includes both drift and diffusion components of the drain current for precise simulation. The developed model can accurately reproduce the drain current characteristics of a-IGZO TFTs over a wide range of gate and drain voltages, which enables faster and accurate TFT structure design, as well as characteristic analyses. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
Oxide semiconductor / Thin-film transistor / Device modeling / Simulation / / / / |
| Reference Info. |
ITE Tech. Rep., vol. 37, no. 2, IDY2013-7, pp. 69-72, Jan. 2013. |
| Paper # |
IDY2013-7 |
| Date of Issue |
2013-01-17 (IDY) |
| ISSN |
Print edition: ISSN 1342-6893 |
| Download PDF |
|
| Conference Information |
| Committee |
IDY IEICE-EID IEE-EDD |
| Conference Date |
2013-01-24 - 2013-01-25 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Shizuoka Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
|
| Paper Information |
| Registration To |
IDY |
| Conference Code |
2013-01-IDY-EID-EDD |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Development of Simulation Model for Oxide Semiconductor Thin-Film Transistors |
| Sub Title (in English) |
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| Keyword(1) |
Oxide semiconductor |
| Keyword(2) |
Thin-film transistor |
| Keyword(3) |
Device modeling |
| Keyword(4) |
Simulation |
| Keyword(5) |
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| Keyword(6) |
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| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Hiroshi Tsuji |
| 1st Author's Affiliation |
NHK (NHK) |
| 2nd Author's Name |
Mitsuru Nakata |
| 2nd Author's Affiliation |
NHK (NHK) |
| 3rd Author's Name |
Hiroto Sato |
| 3rd Author's Affiliation |
NHK (NHK) |
| 4th Author's Name |
Yoshiki Nakajima |
| 4th Author's Affiliation |
NHK (NHK) |
| 5th Author's Name |
Yoshihide Fujisaki |
| 5th Author's Affiliation |
NHK (NHK) |
| 6th Author's Name |
Tatsuya Takei |
| 6th Author's Affiliation |
NHK (NHK) |
| 7th Author's Name |
Toshihiro Yamamoto |
| 7th Author's Affiliation |
NHK (NHK) |
| 8th Author's Name |
Hideo Fujikake |
| 8th Author's Affiliation |
NHK (NHK) |
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| Speaker |
Author-1 |
| Date Time |
2013-01-25 10:02:00 |
| Presentation Time |
8 minutes |
| Registration for |
IDY |
| Paper # |
IDY2013-7 |
| Volume (vol) |
vol.37 |
| Number (no) |
no.2 |
| Page |
pp.69-72 |
| #Pages |
4 |
| Date of Issue |
2013-01-17 (IDY) |